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Module
code: MS3011 |
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Module
name: Semiconductor Devices and Magnetism |
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This concerns a Module |
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In the program of MSc Materials Science and
Engineering, MSc Nanoscience |
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EC (European Credits): 3 (1 EC concerns a work load of 28 hours) |
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Faculty of Mechanical, Maritime and Materials Engineering |
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Department of Materials Science and Engineering |
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Lecturer 1: Prof. dr. Barend Thijsse |
Tel.: 015 - 27 82221 |
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Lecturer 3: |
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Catalog data: Band theory of solids, semiconductors, principles of semiconductor
devices, magnetic materials, lasers, optoelectronics. |
Course year: |
MSc 1st year |
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Course language: |
English |
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Semester: |
2A |
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Hours per week: |
4 |
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Other hours: |
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Assessment: |
Written exam |
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Assessment period: |
2A |
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(see academic calendar) |
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Prerequisites (Module codes): MS4031 Waves, MS4041 Structure of
Materials, MS4051 Physics of Materials, or equivalent courses. Introductory classical mechanics and
electromagnetism, basic quantum mechanics (particle-wave dualism,
one-dimensional Schrödinger equation, hydrogen atom, chemical bond, free
electron theory), basic statistical physics (Maxwell-Boltzmann and
Fermi-Dirac distributions). |
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Follow up (Module codes): MS3031 Computational Materials Science,
MS4111 Thin Film Materials, MS4131NS Solid State Physics II. |
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Detailed description of topics: Using a few simple yet powerful quantum
mechanical models, the student will become familiar with the band theory of
solids and realize that therein lies the root of all materials properties
exploited in modern electronic, magnetic, and optical devices. The course is
focused on the application of the central theoretical results to build clever
devices, all the way from the classical transistor to MEMS, nanotube devices
and spintronics, rather than on the development of advanced theories. The
subjects are approached from an engineering point of view, meaning that
practical considerations and diverse applications get ample coverage. |
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Course material:
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References from literature: |
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Remarks assessment, entry
requirements, etc.: Oral examination possible only in
special circumstances (after two seriously attempted written exams). |
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Learning goals: The student is able to use
quantum mechanical models to explain the properties and behavior of basic
electrical, electronic, magnetic, and optoelectronic devices. More specifically, the student
is able to: ·
Explain the three basic models
for electron energies and electron energy bands in solids (free electron
model, Kronig-Penney model, Feynman model (LCAO)). ·
Apply Fermi-Dirac statistics
to calculate the number of carrier electrons and holes in conductors and
semiconductors. ·
Formulate the combined roles
of electron scattering and electric field on the electrical conductivity of
materials in various materials. ·
Indicate the main fundamental
and application-oriented differences between elemental, III-V, and II-VI
semiconductors. ·
Demonstrate the effects of
doping, composition, and size on energy gaps and Fermi energies. ·
Explain the biased and unbiased p-n junction, the
tunnel diode, the field effect transistor, and high-mobility electron
devices. ·
Formulate how the interactions
of magnetic moments with each other and with an external magnetic field lead
to paramagnetism and ferromagnetism. ·
Apply the basic theories of
magnetism to domain behavior in macroscopic ferromagnets. ·
Formulate the operation of lasers in terms of
population inversion and cavity characteristics. ·
Show how and why heterostructure semiconductor
lasers are built and operated. ·
Explain light detectors, light emitting diodes,
volume holography, and phase conjugation as examples of optoelectronics. ·
Identify the main materials engineering aspects of
device fabrication. ·
Apply all of the above in problems representing
simplified and real cases. ·
Apply all of the
above in problems representing simplified and real cases. |
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Computer use: None |
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Laboratory project(s): None |
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Design content: None |
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